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Issuance of U.S. Patent Number 9,276,022 to OSI OPTOELECTRONICS, INC.
01 Mar, 2016
News

On March 01, 2016 , the USPTO issued U.S. Patent Number 9,276,022 to OSI OPTOELECTRONICS, INC., which was successfully prosecuted by Novel IP.

The '022 patent  is directed towards  novel front side illuminated, back side contact photodiodes and arrays thereof. In one embodiment, the photodiode has a substrate with at least a first and a second side and a plurality of electrical contacts physically confined to the second side. The electrical contacts are in electrical communication with the first side through a doped region of a first type and a doped region of a second type, each of the regions substantially extending from the first side through to the second side. In another embodiment, the photodiode includes a wafer with at least a first and a second side; and a plurality of electrical contacts physically confined to the second side, where the electrical contacts are in electrical communication with the first side through a diffusion of a p+region through the wafer and a diffusion of an n+region through the wafer.

Independent Claim 1 describes " A photodiode, wherein said photodiode comprises: a substrate having a front side and a back side; an active area positioned on said front side; a first deep diffusion region formed within said substrate, located on a left side of said substrate, and extending from said front side to said back side; a second deep diffusion region formed within said substrate, located on a right side of said substrate, and extending from said front side to said back side; and a depletion region around said active area, wherein the first deep diffusion region and the second deep diffusion region are separated by said depletion region and the active area within the photodiode and wherein the first deep diffusion region and the second deep diffusion region each comprises deep diffused regions of a first conductivity type. "